PART |
Description |
Maker |
SST34HF1601B |
16M-bit Concurrent SuperFlash Memory
|
Silicon Storage Technology
|
SST34HF164X |
(SST34HF162x / SST34HF164x) 16M-bit Concurrent SuperFlash SRAM
|
Silicon Storage Technology
|
SST34HF1621S SST34HF1621C SST34HF1641C |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory
|
Silicon Storage Technology
|
SST36VF1602 SST36VF1601-90-4C-BK SST36VF1601-90-4C |
16 Megabit Concurrent SuperFlash
|
Silicon Storage Technology, Inc
|
SST36VF3203 |
32 Mbit (x8/x16) Concurrent SuperFlash
|
SST
|
SST34HF1601-70-4C-L1P SST34HF1601-70-4E-L1P SST34H |
16 Mbit concurrent superflash SRAM combo-memory
|
Silicon Storage Technology
|
SST36VF1602G-70-4I-B3KE SST36VF1601G-70-4C-B3KE SS |
16 Mbit (x8/x16) Concurrent SuperFlash 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
|
SST34HF3244C-70-4E-LSE |
32 Mbit Concurrent SuperFlash 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
|
Silicon Storage Technology, Inc.
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|